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Annals of Parisian Typography, Containing an Account of the by William Parr Greswell

By William Parr Greswell

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Sketch of a Si nanowire waveguide. 4 100 300 500 width w (nm) 700 900 Fig. 3. Propagation constants of different modes in Si nanowire waveguides. 455. The solid lines are for TE modes, and the dashed lines are for TM modes. The dash-doted line denotes nSiO2 . Below this line, modes become leaky. , the separation required for a negligible coupling) is very small (∼2µm) for Si nanowire waveguides [67]. However, when a conventional layout is used (cf. Fig. , a large diffraction order) between two adjacent waveguides for the case of DWDM.

1). 1 Introduction Due to the compatibility of the fabrication technology with micro-electronics, silicon photonics [1] has attracted a lot of interests. , filters, multiplexers, PhCs, as well as a number of active devices like lasers, modulators, and switches, [11, 12, 14, 59], were studied in the recent years. For a passive component, when the feature size shrinks down to sub-micron or nano scales, the most challenging issues are the scattering loss due to sidewall roughness, the coupling efficiency from fiber, and the polarization sensitivity of a device.

8 shows some etched structures for different applications. The corresponding process parameters are listed in Tab. 4. Some aspects of how the parameters affect the final etching results are discussed below: Si etching rate This results from the competition between deposition and etching. Increasing the proportion of SF6 in the total gas mixture will increase the Si etching rate. Increasing the coil power will increase both the density of reactive F radicals and the deposition rate of carbon-fluorine polymers.

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